• 文献标题:   Excitonic Effects in Tungsten Disulfide Monolayers on Two-Layer Graphene
  • 文献类型:   Article
  • 作  者:   GIUSCA CE, RUNGGER I, PANCHAL V, MELIOS C, LIN Z, LIN YC, KAHN E, ELIAS AL, ROBINSON JA, TERRONES M, KAZAKOVA O
  • 作者关键词:   tungsten disulfide monolayer, epitaxial graphene, heterostructure, excitonic effect, work function, trion, ab initio calculation
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Natl Phys Lab
  • 被引频次:   22
  • DOI:   10.1021/acsnano.6b03518
  • 出版年:   2016

▎ 摘  要

Light emission in atomically thin heterostructures is known to depend on the type of materials and the number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulfide (WS2) on one- and two-layer epitaxial graphene, unravelling the effect that the interlayer electronic coupling has on the excitonic properties of such heterostructures. We bring evidence that the excitonic properties of WS, can be effectively tuned by the number of supporting graphene layers. Integrating WS, monolayers with two-layer graphene leads to a significant enhancement of the photoluminescence response, up to 1 order of magnitude higher compared to WS, supported on one-layer graphene. Our findings highlight the importance of substrate engineering when constructing atomically thin-layered heterostructures.