▎ 摘　　要

A theory is presented for the strong enhancement of graphene-on-substrate band gaps by attractive interactions mediated through phonons in a polarizable superstrate. It is demonstrated that gaps of up to 1 eV can be formed for experimentally achievable values of electron-phonon coupling and phonon frequency. Gap enhancements range between factors of 1 to 4, indicating possible benefits to graphene electronics through greater band-gap control for digital applications, lasers, light-emitting diodes, and photovoltaics through the relatively simple application of polarizable materials such as SiO2 and Si3N4.