• 文献标题:   Stability of graphene doping with MoO3 and I-2
  • 文献类型:   Article
  • 作  者:   D ARSIE L, ESCONJAUREGUI S, WEATHERUP R, GUO YZ, BHARDWAJ S, CENTENO A, ZURUTUZA A, CEPEK C, ROBERTSON J
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Cambridge
  • 被引频次:   28
  • DOI:   10.1063/1.4895025
  • 出版年:   2014

▎ 摘  要

We dope graphene by evaporation of MoO3 or by solution-deposition of I-2 and assess the doping stability for its use as transparent electrodes. Electrical measurements show that both dopants increase the graphene sheet conductivity and find that MoO3-doped graphene is significantly more stable during thermal cycling. Raman spectroscopy finds that neither dopant creates defects in the graphene lattice. In-situ photoemission determines the minimum necessary thickness of MoO3 for full graphene doping. (C) 2014 AIP Publishing LLC.