• 文献标题:   Modification of electronic band structure in mL plus nL (m=1, 2; n=1-5) free-stacking graphene
  • 文献类型:   Article
  • 作  者:   JI JT, HE R, JIE YH, ZHANG AM, MA XL, PAN LJ, WANG L, ZHANG LY, ZHANG QM
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Northern Iowa
  • 被引频次:   1
  • DOI:   10.1063/1.4964706
  • 出版年:   2016

▎ 摘  要

In this paper, we studied stacked mL + nL graphene layers using Raman scattering spectroscopy. Our results indicate that the 2D band from stacked graphene can be considered as a superposition of those from the constituent nL and mL graphene layers, and a blueshift in the 2D band is observed when n or m = 1. The blueshift increases with the number of stacked layers and can be well understood by the reduction of Fermi velocity in the single layer graphene, as studied in the 1L + 1L (or twisted bilayer) case. As the number of stacked layers changes from 1 to 5, the Fermi velocity in the single layer graphene reduces to about 85% of its initial value. This study shows a convenient way to realize the modification of the Fermi velocity in free-stacking graphene and is of significance to the applications of graphene-based heterostructures. Published by AIP Publishing.