• 文献标题:   Scanning gate microscopy of current-annealed single layer graphene
  • 文献类型:   Article
  • 作  者:   CONNOLLY MR, CHIOU KL, SMITH CG, ANDERSON D, JONES GAC, LOMBARDO A, FASOLI A, FERRARI AC
  • 作者关键词:   annealing, current density, electrical conductivity, electronhole recombination, graphene, scanning probe microscopy
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Cambridge
  • 被引频次:   38
  • DOI:   10.1063/1.3327829
  • 出版年:   2010

▎ 摘  要

We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole-doped domain close to one of the metal contacts combined with underlying striations in the local NP.