• 文献标题:   Generation and recombination processes via acoustic phonons in disordered graphene
  • 文献类型:   Article
  • 作  者:   VASKO FT, MITIN VV
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   SUNY Buffalo
  • 被引频次:   6
  • DOI:   10.1103/PhysRevB.84.155445
  • 出版年:   2011

▎ 摘  要

Generation-recombination interband transitions via acoustic phonons are allowed in a disordered graphene because of violation of the energy-momentum conservation requirements. The generation-recombination processes are analyzed for the case of scattering by a static disorder and the deformation interaction of carriers with in-plane acoustic modes. The generation-recombination rates were calculated for the cases of intrinsic and heavily-doped graphene at room temperature. The transient evolution of nonequilibrium carriers is described by the exponential fit dependent on doping conditions and disorder level. The characteristic relaxation times are estimated to be about 150-400 ns for a sample with the maximal sheet resistance of similar to 5 k Omega. This rate is comparable with the generation-recombination processes induced by the thermal radiation.