• 文献标题:   p-type doping of graphene with F4-TCNQ
  • 文献类型:   Article
  • 作  者:   PINTO H, JONES R, GOSS JP, BRIDDON PR
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984
  • 通讯作者地址:   Univ Exeter
  • 被引频次:   90
  • DOI:   10.1088/0953-8984/21/40/402001
  • 出版年:   2009

▎ 摘  要

We use local density function theory to study the electronic properties of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) deposited on a graphene surface. We show that charge transfer of 0.3 holes/molecule between graphene and F4-TCNQ occurs, which makes graphene p-type doped. These results are in agreement with experimental findings on F4-TCNQ.