• 文献标题:   Electronic transport through a graphene-based ferromagnetic/normal/ferromagnetic junction
  • 文献类型:   Article
  • 作  者:   CHEN JC, CHENG SG, SHEN SQ, SUN QF
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   33
  • DOI:   10.1088/0953-8984/22/3/035301
  • 出版年:   2010

▎ 摘  要

Electronic transport in a graphene-based ferromagnetic/normal/ferromagnetic junction is investigated by means of the Landauer-Buttiker formalism and the nonequilibrium Green function technique. For the zigzag edge case, the results show that the conductance is always larger than e(2)/h for the parallel configuration of lead magnetizations, but for the antiparallel configuration the conductance becomes zero because of the band-selective rule. Therefore, a magnetoresistance (MR) plateau emerges with the value 100% when the Fermi energy is located around the Dirac point. In addition, choosing narrower graphene ribbons can yield wider 100% MR plateaus and the length change of the central graphene region does not affect the 100% MR plateaus. Although the disorder will reduce the MR plateau, the plateau value can still be kept about 50% even in a large disorder strength case. In addition, when the magnetizations of the left and right leads have a relative angle, the conductance changes as a cosine function of the angle. What is more, for the armchair edge case, the MR is usually small. So, it is more favorable to fabricate a graphene-based spin valve device by using a zigzag edge graphene ribbon.