• 文献标题:   High performance organic photovoltaics with zinc oxide and graphene oxide buffer layers
  • 文献类型:   Article
  • 作  者:   YUSOFF ARB, KIM HP, JANG J
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   Kyung Hee Univ
  • 被引频次:   24
  • DOI:   10.1039/c3nr04709a
  • 出版年:   2014

▎ 摘  要

We report air stable inverted organic photovoltaics (OPVs) incorporating graphene oxide (GO) and solution processed zinc oxide (ZnO) as hole transport and electron transport layers, respectively. Both the hole transport layer and the electron transport layer (HTL and ETL) are of advantage in high transparency and environmental stability. The use of GO and ZnO in poly(2,7-carbazole) derivative (PCDTBT):fullerene derivative (PC70BM)-based inverted OPVs leads to an improved device stability and enhanced high open circuit voltage (V-oc) of 0.81 V, a short-circuit current density (J(sc)) of 14.10 mA cm(-2), and a fill factor (FF) of 54.44 along with a power conversion efficiency of 6.20%.