• 文献标题:   Anti-bias voltage electron-Kondo transport in a quantum dot device driven by a graphene sheet
  • 文献类型:   Article
  • 作  者:   CHEN XW, SHI ZG, ZHANG SR, SONG KH, ZHOU GH
  • 作者关键词:   quantum dot, graphene sheet, kondo effect, highconductance transport
  • 出版物名称:   PHYSICS LETTERS A
  • ISSN:   0375-9601 EI 1873-2429
  • 通讯作者地址:   Huaihua Univ
  • 被引频次:   1
  • DOI:   10.1016/j.physleta.2014.11.011
  • 出版年:   2015

▎ 摘  要

We theoretically investigate the manipulation of electron-Kondo transport through a single-quantum dot (QD) two-electrode device by introducing a side-coupled graphene sheet. It is shown that with increase of coupling strength between the QD and the zero-potential graphene sheet, the anti-bias voltage capability of the QD-electrode Kondo resonance is improved obviously. This causes a high-conductance QD-electrode channel to be opened up for electron transport within a wide bias voltage range. Moreover, the conductance/current of the Kondo channel can be accurately controlled by adjusting the potential of the graphene sheet. These results may be useful for the observation of nonequilibrium Kondo effect and the design of high-conductance control device. (C) 2014 Elsevier B.V. All rights reserved.