• 文献标题:   Photolithographic fabrication and electrochemical characterization of planar on-chip micro-supercapacitors based on nitrogen and oxygen co-doped graphene quantum dots with superior capacitance retention rates
  • 文献类型:   Article
  • 作  者:   JIANG WT, ZHANG LD, ZHAO WQ, ZHOU YY, ZHANG Y, ZHANG GY
  • 作者关键词:   planar onchip microsupercapacitor, capacitance retention rate, nitrogen oxygen codoped graphene quantum dot, modified liquidair interface selfassembly, photolithography
  • 出版物名称:   FERROELECTRICS
  • ISSN:   0015-0193 EI 1563-5112
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1080/00150193.2022.2078124
  • 出版年:   2022

▎ 摘  要

Compared with graphene, nitrogen and oxygen co-doped graphene quantum dots can make up for the limitation of graphene active sites. Here, we demonstrated the fabrication of planar on-chip micro-supercapacitors based on nitrogen and oxygen co-doped graphene quantum dots. The interdigital micro-electrodes were prepared on the surface of the electrode thin film by the photolithographic technique. Notably, the electrochemical performance of the micro-supercapacitors had significantly increased. The area capacitance was 18.74 mu F cm(-2). Furthermore, this work offered the areal energy density of 2.60 nWh cm(-2) and the areal power density of 116.43 mu W cm(-2). After 10,000 cycles at 5000 Vs(-1), the capacitance retention rate of 99.23% was obtained. Meantime, the corresponding time constant was 10.03 mu s.