▎ 摘　　要

In this article we have proposed a novel graphene based tunable semiconductor metamaterial which can be effectively tuned in the long wavelength infrared region of the electromagnetic spectrum by only changing the chemical potential of graphene via a gate voltage without needing to vary the doping concentration of semi-conductor. The previously reported semiconductor metamaterial constructed from doped InGaAs and intrinsic AlInAs layers shows all angle negative refraction Hoffman et al.. However, it cannot be tuned without changing the doping concentration of semiconductor and changing doping concentration makes the material lossy. Since Graphene possesses tunable surface conductivity which can be tuned effectively by changing the chemical po-tential of graphene, we have proposed a novel structure where graphene sheet is inserted between the InGaAs and AlInAs layers. Through rigorous mathematical analysis we have shown that by changing only the chemical potential, without needing to modify the structural properties, it is possible to tune the spectral region of permittivity where negative refraction occurs which in turns gives tunability to iso-frequency wave vector dispersion, transmittance, reflectance and absorption coefficient. The proposed method would simplify the tuning process of semiconductor metamaterials. This unique graphene based tunable semiconductor meta -material would be an attractive feature in the rapid and continuously developing semiconductor industry.