▎ 摘　　要

The thermal decomposition of silicon carbide (SiC) is a promising method for producing wafer-scale single-crystal graphene. The optimal growth condition for high-mobility epitaxial graphene fabricated by infrared rapid thermal annealing is discussed in this paper. The surface structures, such as step-terrace and graphene coverage structures, on a non-off-axis SiC(0001) substrate were well controlled by varying the annealing time in a range below 10 min. The mobility of graphene grown at 1620 degrees C for 5min in 100Torr Ar ambient had a maximum value of 2089 cm(2)V(-1)s(-1). We found that the causes of the mobility reduction were low graphene coverage, high sheet carrier density, and nonuniformity of the step structure. (C) 2016 The Japan Society of Applied Physics