• 文献标题:   Tunable Schottky barrier in van der Waals heterostructures of graphene and hydrogenated phosphorus carbide monolayer: first-principles calculations
  • 文献类型:   Article
  • 作  者:   HUANG T, CHEN Q, CHENG MQ, HUANG WQ, HU WY, HUANG GF
  • 作者关键词:   schottky barrier, van der waals heterostructure, pc monolayer, external electric field, firstprinciples calculation
  • 出版物名称:   JOURNAL OF PHYSICS DAPPLIED PHYSICS
  • ISSN:   0022-3727 EI 1361-6463
  • 通讯作者地址:   Hunan Univ
  • 被引频次:   4
  • DOI:   10.1088/1361-6463/ab1f5a
  • 出版年:   2019

▎ 摘  要

Atomically thin phosphorus carbide (PC) layers with intriguing electronic and optical properties are promising two-dimensional (2D) materials for electronic and optoelectronic applications. Herein, we first explore the performance of 2D hydrogenated PC monolayers as a channel material contacting with graphene (G) to form van der Waals heterostructures using first-principles calculations. Two PCH (hydrogenation to C)/G and HPC (hydrogenation to P)/G heterostructures are investigated. Results reveal that the electronic properties of constituent layers are well preserved in heterostructures, and a p-type Schottky contact with small Schottky barrier height (SBH) are formed at their interfaces. Interestingly, the Schottky type (n-type and p-type), SBH, and contact types (Schottky contact and Ohmic contact) at the interface can be tuned by external electric field. This work would open a new avenue for applications of 2D PC-based heterostructure devices in future nanoelectronics and optoelectronics.