• 文献标题:   Graphene oxide as a p-dopant and an anti-reflection coating layer, in graphene/silicon solar cells
  • 文献类型:   Article
  • 作  者:   YAVUZ S, KURU C, CHOI D, KARGAR A, JIN S, BANDARU PR
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   Univ Calif San Diego
  • 被引频次:   21
  • DOI:   10.1039/c5nr09143h
  • 出版年:   2016

▎ 摘  要

It is shown that coating graphene-silicon (Gr/Si) Schottky junction based solar cells with graphene oxide (GO) improves the power conversion efficiency (PCE) of the cells, while demonstrating unprecedented device stability. The PCE has been shown to be increased to 10.6% (at incident radiation of 100 mW cm(-2)) for the Gr/Si solar cell with an optimal GO coating thickness compared to 3.6% for a bare/uncoated Gr/Si solar cell. The p-doping of graphene by the GO, which also serves as an antireflection coating (ARC) has been shown to be a main contributing factor to the enhanced PCE. A simple spin coating process has been used to apply GO with thickness commensurate with an anti-refection coating (ARC) and indicates the suitability of the developed methodology for large-scale solar cell assembly.