• 文献标题:   Fabrication of multi-layer graphene by repeated transfer
  • 文献类型:   Article
  • 作  者:   KAWATA K, KAWAKI S, NAKAMURA T, KOGA Y, HASEGAWA M
  • 作者关键词:  
  • 出版物名称:   AIP ADVANCES
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1063/5.0100501
  • 出版年:   2022

▎ 摘  要

Multi-layer graphene was formed by repeated transfer onto a silicon oxide substrate, and changes in its doping characteristics were observed. The structure of multi-layer graphene was investigated in comparison with pyrolytic graphite with a turbostratic structure. Single-layer graphene is doped due to the influence of the silicon oxide substrate, and the influence of poly(methyl methacrylate) and water residue, which are used for the transfer, is small. Graphene in the first layer suppresses the influence of the silicon oxide substrate, and the second and subsequent layers are almost unaffected. By repeating the transfer and stacking, multi-layer graphene approaches ideal turbostratic graphite. (C) 2022 Author(s).All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY)license (http://creativecommons.org/licenses/by/4.0/).