• 文献标题:   Twist angle dependent electronic properties in 2D graphene/MoS2 vdW heterostructures
  • 文献类型:   Article
  • 作  者:   WANG JC, GE M, MA RR, SUN Y, CHENG LY, WANG R, GUO MM, ZHANG JF
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:  
  • 被引频次:   2
  • DOI:   10.1063/5.0077669
  • 出版年:   2022

▎ 摘  要

Two-dimensional (2D) heterostructures constructed by different 2D materials offer new opportunities for novel nano-devices. Twist angle (theta) between two individual layers in 2D van der Waals (vdW) heterostructures shows great importance in modulating their electronic properties. Here, we performed first-principles calculations to study the thermodynamic stability and electronic properties of graphene/MoS2 (Gr/MoS2) vdW heterostructures. We have built dozens of possible Gr/MoS2 vdW heterostructures under the limitation of the maximum mismatch (delta = 20 angstrom). We found the cohesive energy (E-coh) is dependent on the interlayer distance and theta. In addition, a huge difference can be found in both the band offset and interlayer carrier's lifetime of Gr/MoS2 with different theta. These results provide valuable insights into the identification of these twist structures in experiments and the designation of Gr/MoS2 related optoelectronic devices.