• 文献标题:   Graphene saturable absorber for diode pumped Yb:Sc2SiO5 mode-locked laser
  • 文献类型:   Article
  • 作  者:   CAI W, JIANG SZ, XU SC, LI YQ, LIU J, LI C, ZHENG LH, SU LB, XU J
  • 作者关键词:   graphene, passively modelocked laser, yb:sc2sio5 crystal
  • 出版物名称:   OPTICS LASER TECHNOLOGY
  • ISSN:   0030-3992 EI 1879-2545
  • 通讯作者地址:   Shandong Normal Univ
  • 被引频次:   45
  • DOI:   10.1016/j.optlastec.2014.06.010
  • 出版年:   2015

▎ 摘  要

High-quality monolayer graphene was successfully fabricated by chemical vapor deposition technology. By using the graphene as a saturable absorber, the Yb:Sc2SiO5 crystal passively mode-locked laser was demonstrated for the first time. Stable mode-locked laser pulses were obtained with a repetition rate of 90.7 MHz and an average output power of 480 mW at the center wavelength of 1062.8 nm. The maximum single pulse energy and the maximum peak power were 5.3 nJ and 378 W, respectively. (C) 2014 Elsevier Ltd. All rights reserved.