• 文献标题:   Large-area synthesis and transfer of multilayer hexagonal boron nitride for enhanced graphene device arrays
  • 文献类型:   Article
  • 作  者:   FUKAMACHI S, SOLISFERNANDEZ P, KAWAHARA K, TANAKA D, OTAKE T, LIN YC, SUENAGA K, AGO H
  • 作者关键词:  
  • 出版物名称:   NATURE ELECTRONICS
  • ISSN:   2520-1131
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.1038/s41928-022-00911-x EA FEB 2023
  • 出版年:   2023

▎ 摘  要

Multilayer hexagonal boron nitride (hBN) can be used to preserve the intrinsic physical properties of other two-dimensional materials in device structures. However, integrating the material into large-scale two-dimensional heterostructures remains challenging due to the difficulties in synthesizing high-quality large-area multilayer hBN and combining it with other two-dimensional material layers of the same scale. Here we show that centimetre-scale multilayer hBN can be synthesized on iron-nickel alloy foil by chemical vapour deposition, and then used as a substrate and as a surface-protecting layer in graphene field-effect transistors. We also develop an integrated electrochemical transfer and thermal treatment method that allows us to create high-performance graphene/hBN heterostacks. Arrays of graphene field-effect transistors fabricated by conventional and scalable methods show an enhancement in room-temperature carrier mobility when hBN is used as an insulating substrate, and a further increase-up to a value of 10,000 cm(2) V-1 s(-1)-when graphene is encapsulated with another hBN sheet. Multilayers of hexagonal boron nitride can be grown using a chemical vapour deposition process on iron-nickel foil and integrated into a large array of graphene devices that exhibit room-temperature carrier mobilities of up to around 10,000 cm(2) V-1 s(-1).