• 文献标题:   Nanoscale Tunable Reduction of Graphene Oxide for Graphene Electronics
  • 文献类型:   Article
  • 作  者:   WEI ZQ, WANG DB, KIM S, KIM SY, HU YK, YAKES MK, LARACUENTE AR, DAI ZT, MARDER SR, BERGER C, KING WP, DE HEER WA, SHEEHAN PE, RIEDO E
  • 作者关键词:  
  • 出版物名称:   SCIENCE
  • ISSN:   0036-8075
  • 通讯作者地址:   USN
  • 被引频次:   504
  • DOI:   10.1126/science.1188119
  • 出版年:   2010

▎ 摘  要

The reduced form of graphene oxide (GO) is an attractive alternative to graphene for producing large-scale flexible conductors and for creating devices that require an electronic gap. We report on a means to tune the topographical and electrical properties of reduced GO (rGO) with nanoscopic resolution by local thermal reduction of GO with a heated atomic force microscope tip. The rGO regions are up to four orders of magnitude more conductive than pristine GO. No sign of tip wear or sample tearing was observed. Variably conductive nanoribbons with dimensions down to 12 nanometers could be produced in oxidized epitaxial graphene films in a single step that is clean, rapid, and reliable.