• 文献标题:   Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots
  • 文献类型:   Article
  • 作  者:   WANG P, LIN SS, DING GQ, LI XQ, WU ZQ, ZHANG SJ, XU ZJ, XU S, LU YH, XU WL, ZHENG ZY
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Zhejiang Univ
  • 被引频次:   1
  • DOI:   10.1063/1.4946856
  • 出版年:   2016

▎ 摘  要

We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells. Published by AIP Publishing.