• 文献标题:   Strain-Modulated Perfect Valley Precession and Valley Transistor in Graphene
  • 文献类型:   Article
  • 作  者:   LI RG, LIU JF, WANG J
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW APPLIED
  • ISSN:   2331-7019
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1103/PhysRevApplied.19.024075
  • 出版年:   2023

▎ 摘  要

We propose the realization of perfect valley precession by use of strain, which gives rise to an effective vector potential and moves two valleys in opposite directions in momentum space. It is shown that the spatial precession period is independent of both the Fermi energy and the transverse wave vector. This is crucial to perfect precession in a practical device with multiple transverse wave vectors or modes. To the-oretically demonstrate the perfect valley precession, we investigate the conductivity of a Kekule graphene superlattice/graphene/Kekule graphene superlattice junction that acts as a valley transistor. Due to the valley precession, the conductivity exhibits perfect oscillations with the strain and the conductivity min-ima are very close to zero. Our finding provides a strategy to design ideal valleytronics and straintronics devices.