▎ 摘　　要

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (000 (1) over bar) C- face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC (000 (1) over bar), indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526720]