• 文献标题:   Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection
  • 文献类型:   Article
  • 作  者:   TSAI DS, CHIANG PY, TSAI ML, TU WC, CHEN C, CHEN SL, CHIU CH, LI CY, UEN WY
  • 作者关键词:   graphene, camphorbased cvd, selfpower photodetector, graphene, si pd
  • 出版物名称:   MICROMACHINES
  • ISSN:  
  • 通讯作者地址:   Chung Yuan Christian Univ
  • 被引频次:   0
  • DOI:   10.3390/mi11090812
  • 出版年:   2020

▎ 摘  要

This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero bandgap junction materials (95% coverage bilayer and high-uniformity graphene were successfully obtained by camphor-based CVD processes. Furthermore, the carrier mobility of the camphor-based CVD bilayer graphene at room temperature is 1.8 x 10(3) cm(2)/V center dot s. Due to the incorporation of camphor-based CVD graphene, the graphene/p-Si Schottky junctions show a good rectification property (rectification ratio of similar to 110 at +/- 2 V) and good performance as a self-powered (under zero bias) photodetector from UV to LWNIR. The photocurrent to dark current ratio (PDCR) value is up to 230 at 0 V under white light illumination, and the detectivity (D*) is 8 x 10(12) cmHz(1/2)/W at 560 nm. Furthermore, the photodetector (PD) response/decay time (i.e., rise/fall time) is similar to 118/120 mu s. These results support the camphor-based CVD bilayer graphene/Si Schottky PDs for use in self-powered and ultra-broadband light detection in the future.