• 文献标题:   Large negative differential resistance in graphene nanoribbon superlattices
  • 文献类型:   Article
  • 作  者:   TSENG P, CHEN CH, HSU SA, HSUEH WJ
  • 作者关键词:   electronic transport in graphene, negative differential resistance, structure nanoelectronic properties of superlattice, band structure
  • 出版物名称:   PHYSICS LETTERS A
  • ISSN:   0375-9601 EI 1873-2429
  • 通讯作者地址:   Natl Taiwan Univ
  • 被引频次:   5
  • DOI:   10.1016/j.physleta.2018.03.039
  • 出版年:   2018

▎ 摘  要

A graphene nanoribbon superlattice with a large negative differential resistance (NDR) is proposed. Our results show that the peak-to-valley ratio (PVR) of the graphene superlattices can reach 21 at room temperature with bias voltages between 90-220 mV, which is quite large compared with the one of traditional graphene-based devices. It is found that the NDR is strongly influenced by the thicknesses of the potential barrier. Therefore, the NDR effect can be optimized by designing a proper barrier thickness. The large NDR effect can be attributed to the splitting of the gap in transmission spectrum (segment of Wannier-Stark ladder) with larger thicknesses of barrier when the applied voltage increases. (C) 2018 Elsevier B.V. All rights reserved.