▎ 摘　　要

This paper reports the atomistic simulation of AA and AB stacking bilayer graphene nanoribbon (BGNR) incorporated vacancy defect. The vacancy defects include single vacancy (SV), stone wales (SW), divacancy (DV) and 57775 located in BGNR layers. Through simulation, it is demonstrated the SW defect less affected the bandgap in BGNR. In addition, the one dimensional signature of the transmission spectrum (TS) and density of state (DOS) vanished. Importantly, the result obtained shows that the vacancy defects that are located in either layer 1 (L-1) or both layer 1 and layer 2 (L-1+ L-2) behave differently on the current-voltage (I-V) characteristic for both AA and AB stackings BGNR devices depending on the types of defect. The use of defect enables the modification of BGNR electronic and transport properties.