• 文献标题:   The effect of bilayer regions on the response of epitaxial graphene devices to environmental gating
  • 文献类型:   Article
  • 作  者:   HILLPEARCE RE, ELESS V, LARTSEV A, MARTIN NA, SNOOK ILB, HELMORE JJ, YAKIMOVA R, GALLOP JC, HAO L
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Natl Phys Lab
  • 被引频次:   5
  • DOI:   10.1016/j.carbon.2015.05.061
  • 出版年:   2015

▎ 摘  要

The effect of a bilayer area on the electronic response to environmental gating of a monolayer graphene Hall bar device is investigated using room temperature magnetotransport and scanning Kelvin probe microscopy measurements in a controlled environment. The device is tuned through the charge neutrality point with n-p-n-junctions formed. Scanning Kelvin probe measurements show that the work function of the monolayer graphene decreases more than that of the bilayer area however magnetotransport measurements show a larger change in carrier concentration for bilayer graphene with environmental gating. Interface scattering at the boundary between the monolayer and bilayer regions also affects device response with field-dependent suppression of the conductivity observed near the charge neutrality point. Simultaneous electronic and environmental scanning Kelvin probe measurements are used to build nano-scale maps of the work function of the device surface revealing the areas of greatest work function change with environmental gating. Crown Copyright (C) 2015 Published by Elsevier Ltd. All rights reserved.