• 文献标题:   Chemical doping of graphene
  • 文献类型:   Article
  • 作  者:   LIU HT, LIU YQ, ZHU DB
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS CHEMISTRY
  • ISSN:   0959-9428 EI 1364-5501
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   897
  • DOI:   10.1039/c0jm02922j
  • 出版年:   2011

▎ 摘  要

Recently, a lot of effort has been focused on improving the performance and exploring the electric properties of graphene. This article presents a summary of chemical doping of graphene aimed at tuning the electronic properties of graphene. p-Type and n-type doping of graphene achieved through surface transfer doping or substitutional doping and their applications based on doping are reviewed. Chemical doping for band gap tuning in graphene is also presented. It will be beneficial to designing high performance electronic devices based on chemically doped graphene.