▎ 摘　　要

The graphene film was directly deposited on SiO2 antireflection(AR) structure by remote catalyzation of Cu nanoparticles using chemical vapor deposition method to fabricate the transparent conducting films with graphene/AR composite structure. Continuous graphene hollow sphere array was obtained after removing SiO2 AR structure, and the peak intensity ratios of I-2D/I-G and I-D/I-G and the full-width at half-height maximum (FWHM) of the 2D peak in the Raman spectrum of the graphene grew in 10 min were 2.31, 0.77 and about 40 cm(-1), respectively, which demonstrated that the continuous and low-defect few layer graphene was grown on the surface of SiO2 AR structure. By introducing the SiO2 AR structure, transmittance of the film increases by 5.5% at 550 nm and the sheet resistance decreases by 20.09% on the average. Data from this study suggest that this film can avoid complex transfer process, decrease damage, and on the meantime realize high transparency and high conductivity performance, showing obvious applicable prospects in the field of photovoltaic devices, flat panel display and so on.