▎ 摘　　要

Graphene and P-type indium phosphide (P-InP) could be combined by van der Waals forces to form a Schottky junction, which can be applied in photodetection. This study reported a graphene/P-InP Schottky junction near-infrared photodetector with a 3-nm-thick Al2O3 passivation layer and investigated the photoelectric characteristics of such device. As a result, the near-infrared photodetector had a Schottky barrier of 0.89 eV. Besides, this device had a significant response to the wavelength of 808 nm near-infrared light with responsivity and detectivity up to 5.2 mA/W and 1.3 x 10(10) cm Hz(1/2) W-1, respectively, under a reverse bias voltage of 0.4 V. It is expected that the Graphene/P-InP Schottky junction near-infrared photodetector with an Al2O3 passivation layer may play a vital role in the field of optoelectronic devices in future.