▎ 摘　　要

Nanoporous graphene (NPG) exhibits an apparent semiconductivity to solve the zero-gap problem of graphene and also offers multifunctionalities that are directly associated with its structural and chemical nature. However, reliable, low-cost, and large-scale production of NPG is a major challenge for its practical applications. Here, a high-performance resistive-switching memory cell based on biomass-derived NPG materials is demonstrated for the first time. A new processing method is suggested to create 3D NPG starting from Saccharum officinarum. The fabricated Au/NPG/Au two-terminal devices achieve an excellent electrical performance characterized by an operating voltage below 5 V and an ON/OFF current ratio of over 10(6). A range of materials and device characterizations reveal the oxygen ion migration and charge-injection modulation as a key mechanism behind the observed memory behaviors. This unconventional approach to high-performance memory devices is an important step toward sustainable electronics and intelligent technologies.