▎ 摘　　要

Band structure engineering by changing the parameters of Moire = superlattices enables creation of materials with outstanding properties for twistronics, straintronics and quantum nanoelectronics applications. Herein, twisted multilayer graphene (tMLG) with various combinations of twist angles (0) and numerous Moire = superlattices was synthesized. The strong dependence of the transport properties of tMLG on the structural characteristics was demonstrated using synchrotron-based core-level spectroscopy methods combined with micro-Raman spectroscopy. It has been shown that tMLG with a large content of the twisted phase with the twist angles between the adjacent graphene layers of 0 = 26-30 degrees over the entire tMLG thickness is characterized by a perfect structure of the single layer graphene (SLG) and extraordinary transport characteristics. At low temperatures, the asymmetry of charge carriers and atypical temperature dependence of average carrier mobility m were observed. In such tMLG, m was higher than 105 cm2V-1s-1. Decrease in the content of the twisted phase with 0 = 26-30 degrees, as well as increase in the contents of other twist angles and AB-stacked phase (0 = 0 degrees), leads to a significant decrease in m. Hence, tMLGs are a better choice for the nanoelectronics industry because, having outstanding transport properties, they are, contrary to SLG, insensitive to the specific features of process procedures.