▎ 摘　　要

Equilibration of quantum Hall edges is studied in a high quality dual gated bilayer graphene device in both unipolar and bipolar regimes when all the degeneracies of the zero energy Landau level are completely lifted. We find that in the unipolar regime when the filling factor under the top gate region is higher than the back gate filling factor, the equilibration is partial based on their spin polarization. However, the mixing of the edge states in the bipolar regime is insensitive to the spin configurations of the Landau levels and the values are very close to the full equilibration prediction. This has been explained by Landau level collapsing at the sharp p-n junction in our thin hBN (similar to 15 nm) encapsulated device, in consistent with the existing theory.