▎ 摘　　要

Here we analyse the evolution of the disorder induced D-band (similar to 1350cm(-1)) and of the first-order allowed G-band (similar to 1584 cm(-1)) in the Raman spectra of ion bombarded graphene. By increasing the bombardment time, we increase the disorder and, consequently, decrease the average distance (L(D)) between defects. We describe how the intensity, full width at half maximum (FWHM) and integrated area vary for the D and G bands as a function of LD. Finally, we compare the evolution of the intensity ratio I(D)/I(G) and of the integrated area ratio A(D)/A(G) between the D and G bands as a method for quantifying disorder in graphene. For practical use and inter-laboratorial comparison, the authors advise using the intensity ratio for a more suitable measure for analysing defect density. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim