• 文献标题:   Graphene/MoS2 Thin Film Based Two Dimensional Barristors With Tunable Schottky Barrier for Sensing Applications
  • 文献类型:   Article
  • 作  者:   JAHANGIR I, UDDIN MA, SINGH AK, CHANDRASHEKHAR MVS, KOLEY G
  • 作者关键词:   barristor, graphene/mos2 heterojunction, tunable barrier, molecular detection, no2 sensor, nh3 sensor
  • 出版物名称:   IEEE SENSORS JOURNAL
  • ISSN:   1530-437X EI 1558-1748
  • 通讯作者地址:  
  • 被引频次:   2
  • DOI:   10.1109/JSEN.2021.3120792
  • 出版年:   2021

▎ 摘  要

In this work, a large-area MoS2/graphene barristor device, with an electrically tunable Schottky barrier height, has been studied for detection of various gaseous analytes. The Schottky barrier height could be modulated by over 0.65 eV, allowing the drain current to be tuned by many orders of magnitude. Using diluted NO2 and NH3 gases as analytes, the performance of the barristor device was compared with individual MoS2 and graphene based planar FETs, where the barristor device outperformed its counterparts in terms of response magnitude and limit of detection. Due to the atomically thin nature of MoS2 and graphene, electric field applied to one material could not be fully screened from the other one, which allowed both materials to act as a composite structure when analyte molecules interacted with the barristor device. This apparently reversed the dopant behavior of NO2 and NH3, while increasing the device sensitivity through subthreshold operation. Both conductance and capacitance based measurements are presented to highlight the charge transfer and barrier height modulation, to support the unique sensing mechanism observed in the 2D barristor device. A lower limit of detection in low ppb is established for NO2 and low ppm for NH3, which could be further tuned by altering gate-drain bias conditions.