• 文献标题:   Defect-Induced Supercollision Cooling of Photoexcited Carriers in Graphene
  • 文献类型:   Article
  • 作  者:   ALENCAR TV, SILVA MG, MALARD LM, DE PAULA AM
  • 作者关键词:   supercollision, electron dynamic, twodimensional crystal, defect, graphene
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Univ Fed Minas Gerais
  • 被引频次:   17
  • DOI:   10.1021/nl502163d
  • 出版年:   2014

▎ 摘  要

Defects play a fundamental role in the energy relaxation of hot photoexcited carriers in graphene, thus a complete understanding of these processes are vital for improving the development of graphene devices. Recently, it has been theoretically predicted and experimentally demonstrated that defect-assisted acoustic phonon supercollision, the collision between a carrier and both an acoustic phonon and a defect, is an important energy relaxation process for carriers with excess energy below the optical phonon emission. Here, we studied samples with defects optically generated in a controlled manner to experimentally probe the supercollision model as a function of the defect density. We present pump and probe transient absorption measurements showing that the decay time decreases as the density of defect increases as predicted by the supercollision model.