• 文献标题:   Production of heavily n- and p-doped CVD graphene with solution-processed redox-active metal-organic species
  • 文献类型:   Article
  • 作  者:   PANIAGUA SA, BALTAZAR J, SOJOUDI H, MOHAPATRA SK, ZHANG SY, HENDERSON CL, GRAHAM S, BARLOW S, MARDER SR
  • 作者关键词:  
  • 出版物名称:   MATERIALS HORIZONS
  • ISSN:   2051-6347 EI 2051-6355
  • 通讯作者地址:   Georgia Inst Technol
  • 被引频次:   41
  • DOI:   10.1039/c3mh00035d
  • 出版年:   2014

▎ 摘  要

CVD graphene has been n- and p-doped using redox-active, solution-processed metal-organic complexes. Electrical measurements, photoemission spectroscopies, and Raman spectroscopy were used to characterise the doped films and give insights into the changes. The work function decreased by as much as 1.3 eV with the n-dopant, with contributions from electron transfer and surface dipole, and the conductivity significantly increased.