• 文献标题:   Sulfur doping in multivacancy graphene systems
  • 文献类型:   Article
  • 作  者:   MOMBRU D, FACCIO R, MOMBRU AW
  • 作者关键词:   graphene, dft, vacancie, sulfur
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332 EI 1873-5584
  • 通讯作者地址:   Univ Republica
  • 被引频次:   3
  • DOI:   10.1016/j.apsusc.2018.07.218
  • 出版年:   2018

▎ 摘  要

The conformational, magnetic and electronic study of one and two sulfur atoms doping on multivacancy graphene systems, using first principles calculations is presented. The location for the addition of the sulfur atoms is ruled by the presence of pentagonal figures in the optimized multivacancy graphene system or, in case of the absence of such figures, by the concave four membered structures in the vacancy. The electronic structure and the magnetism in these systems are strongly affected by the cancellation of dangling bonds due to the inclusion of sulfur atoms. Finally, it was possible to demonstrate that the inclusion of one and even a second sulfur atoms in the multivacancy graphene systems is favorable.