▎ 摘　　要

Achieving low contact resistance between graphene and metals is crucial to the further development of high-performance graphene field effect transistors. Increasing the number of conduction modes is the key issue in improving the contact between graphene and metals. This study characterized the work function between graphene and metal contacts using in situ thermal evaporation and ultraviolet photoelectron spectroscopy. Silver produces weak n-type doping and gold produces heavy p-type doping in graphene. The use of a polymer-free transfer method and a double electrode contact structure produced gold contacts with a resistance value of 352.8 Omega. mu m, which is 2.7 times lower than that obtained using conventional methods. This method also produced silver contacts with a resistance value of 958.6 Omega. mu m, which represents a 180% improvement over conventional methods.