• 文献标题:   Preparation and characterization of LbL films based on graphene oxide nanoparticles interacting with 3-n-propylpyridinium silsesquioxane chloride
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   ESTEVAM RB, FERREIRA RT, BISCHOF ABH, DOS SANTOS FS, SANTOS CS, FUJIWARA ST, WOHNRATH K, LAZARO SR, GARCIA JR, PESSOA CA
  • 作者关键词:   films lbl, graphene oxide nanoparticle, polyelectrolyte, inorganic polymer 3npropylpyridinium silsesquioxane chloride, modified electrode
  • 出版物名称:   SURFACE COATINGS TECHNOLOGY
  • ISSN:   0257-8972
  • 通讯作者地址:   Univ Estadual Ponta Grossa
  • 被引频次:   5
  • DOI:   10.1016/j.surfcoat.2015.03.053
  • 出版年:   2015

▎ 摘  要

Graphene oxide (GO) obtained by electrochemical exfoliation method was used to prepare a composite with the inorganic polymer, 3-n-propylpyridinium silsesquioxane chloride polymer, SiPy+. This composite (SiPy+(GO)) was applied as polyelectrolyte to form LbL films with nickel tetrasulfophthalocyanine (NiTsPc4-) as polyanion. The absorbance of the NiTsPc4- Qbands linearly increased with the number of deposited bilayers (SiPy+(GO)/NiTsPc4-)(n) LbL films. From the graphics of absorbance as a function of the number of bilayers, it was possible to observe that the amount of NiTsPc4- deposited on the FTO substrate is higher to the SiPy+(GO)/NiTsPc4- than SiPy+/NiTsPc4- films, as a consequence of the effective pi-pi interaction between the graphene and phthalocyanine molecules. The Raman spectra of the film with graphene oxide, SiPy+(GO)/NiTsPc4- showed the GO "D" bands at 1339 cm(-1), and the "G" bands at 1556 cm(-1) The presence of GO in the SiPy+(GO)/NiTsPc4- film was confirmed by the presence of "2D" band at 2686 cm(-1), which is not observed in the SiPy+/NiTsPc4- film. Cyclic voltammetric and EIS studies showed that the presence of graphene oxide nanoparticles in the film configuration considerably increased its conductivity when compared to the film without GO (SiPy+/NiTsPc4-) which favors its application for the development of electrochemical sensors. (C) 2015 Elsevier B.V. All rights reserved.