▎ 摘　　要

Although high-quality graphene can be produced on catalyst metals, their practical applications, especially Si technologies, are limited by the high-temperature growth and the posttransfer process. A high-performance system composed of W/nanocrystalline graphene (nc-G)/TiN is realized for the long-term downscaling of interconnect technology. The nc-G is directly grown on noncatalytic TiN, up to 300 mm in diameter, at a low temperature of approximate to 560 degrees C,which is below the complementary metal-oxide semiconductor integration temperature. The versatile roles of nc-G in the interconnect are demonstrated: as a promoter of the preferential grain growth of the W layer, as a diffusion barrier to metal-silicide formation, and as a proper adhesion layer with adjacent layers. Overall, a significant reduction (27%) in the resistance of the interconnect is achieved by the insertion of nc-G between W and TiN. This work points to the possibility of practical graphene applications via direct nc-G growth that is compatible with current Si technology.