▎ 摘　　要

The reversible migration of adatoms along a basal plane of graphene under electrical bias is experimentally demonstrated. Single-layer graphene oxide with partial oxygen adatom coverage is utilized for this demonstration. The intensity ratio of G and G' Raman modes is used to determine the oxygen adatoms migration. Finally, reversible wettability property of graphene due to oxygen adatom migration is demonstrated. [GRAPHICS]