• 文献标题:   Facile strategy of synthesizing alpha-MoO3-x nanorods boosted as traced by 1% graphene oxide: Efficient visible light photocatalysis and gas sensing applications
  • 文献类型:   Article
  • 作  者:   MOHAMED MM, SALAMA TM, MORSY M, ABOU SHAHBA RM, MOHAMED SH
  • 作者关键词:   1wt%go/moo3x, solvothermal annealing route, oxygen deficiency, photocatalysi, nh 3 sensing
  • 出版物名称:   SENSORS ACTUATORS BCHEMICAL
  • ISSN:  
  • 通讯作者地址:   Benha Univ
  • 被引频次:   3
  • DOI:   10.1016/j.snb.2019.126960
  • 出版年:   2019

▎ 摘  要

Herein, we report the synthesis of MoO3-x nanorods via an environmentally solvothermal/annealing route, which involves refluxing of an ethanolic solution of (NH4)(6) Mo7O24 center dot 4H(2)O for 5 h at 70 degrees C followed by drying and calcination at 350 degrees C for 2 h. Graphene oxide (GO) incorporation at 1% ratio into MoO3 increases the oxygen deficient ratio (20.6%) compared to GO free MoO3 catalyst (17.3%), as emphasized by XPS results. A comprehensive characterization using XRD, TEM-SAED, UV-vis, FTIR, Raman, photoluminescence and N-2 sorptiometry was illustrated. The irregular circular shape of 1%GO center dot MoO3-x; of E-g equal 2.7 eV, and an average diameter of 40 nm has shown higher photocatalytic action towards MB degradation (20 ppm) under visible light illumination (160 W, > 420 nm) giving a rate constant of 0.016 min(-1) exceeding that of MoO3-x by 18 times. Although 1%GO center dot MoO3-x exhibits lower surface area and pore volume than those in GO free MoO3-x the potentiality of the former is mainly dependent on the strong linkage formed between MoO3-x and graphene sheets. Based on increasing the oxygen deficiency in 1%GO center dot MoO3-x powerful oxidizing moieties are depicted to affect the MB degradation including in situ generated H2O2, O-center dot(2)- and O(center dot)Hspecies. The gas sensing property of 1%GO center dot MoO3-x towards 100 ppm NH 3 at 200 degrees C was increased by 6.4 times that of GO free MoO3-x nanorods. This was mainly due to the hetero-junction formed between n-(MoO3-x) and p-type (partially reduced GO) conducing channels; affirmed via Mott-schottky plot, and the facile electron transfer from GO into MoO3-x The mechanism of the oxygen deficit 1%GO center dot MoO3-x structure is also discussed, exploring that this type of sensor has a promising application to other reducing gases. The 1%GO center dot MoO3-x sensor exhibited long-term stability at different NH3 concentrations as well as high selectivity exceeding the corresponding pure counterparts.