▎ 摘　　要

Two complementary modeling approaches (1D and 2D) are developed to explain the temperature-dependent growth kinetics of PECVD graphene formation on cobalt substrate. The gas temperature and the species concentrations are predicted for different process conditions by involving gas-phase and surface reaction mechanisms which consist of 15 gas species, 43 gas reactions, 10 surface species and 34 surface reactions. The influence of the growth temperature, the microwave power and the methane flow rate, affecting the gas species mole fractions in the reactor and the surface coverage is evaluated. The numerical results clearly indicate that the hydrogen atoms play an important role in the graphene growth in microwave plasma systems. A global sensitivity analysis is then performed in order to understand the basic mechanisms that lead to the transport of reactants by gas diffusion from the main gas stream through the boundary layer providing insight regarding the growth of graphene on the cobalt substrate.