▎ 摘　　要

Strain engineering is a key technology for using graphene in electronic devices; the strain-induced pseudo-gauge field reflects Dirac electrons, which opens the so-called conduction gap. Because strain accumulates in constrictions, graphene nanoconstrictions are a good platform for this technology. However, it is also known that Fabry-Perot type quantum interference plays an important role in the electrical conduction of the graphene nanoconstrictions at low bias voltages. We argue that these two effects have different strain dependences; the pseudo-gauge field gives a "strain-even" [symmetric with respect to positive (tensile) and negative (compressive) strain] contribution, whereas the quantum interference gives a "strain-odd" (antisymmetric) contribution. As a result, a peculiar dependence of conductance on strain appears, even at typical room temperatures.