• 文献标题:   Phonon-Limited Transport in Graphene Pseudospintronic Devices
  • 文献类型:   Article
  • 作  者:   ESTRADA ZJ, DELLABETTA B, RAVAIOLI U, GILBERT MJ
  • 作者关键词:   critical current, nanoelectronic, phonon, tunneling
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106 EI 1558-0563
  • 通讯作者地址:   Univ Illinois
  • 被引频次:   1
  • DOI:   10.1109/LED.2012.2207701
  • 出版年:   2012

▎ 摘  要

Apredicted room-temperature phase transition from Fermi liquid to dissipationless Bose-Einstein exciton superfluid suggests that graphene pseudospin devices may have the potential to far outperform traditional CMOS devices. When examining the possibility of a room-temperature exciton condensate, it is important to consider scattering of charge carriers by phonons in each of the constituent graphene monolayers. Using the nonequilibrium Green's function formalism, we examine the effect that carrier-phonon scattering has on device performance. We find that the effect of carrier-phonon scattering has strong dependence on the device coherence length. As such, for large gate voltages, the effect of phonons on interlayer transport is negligible.