▎ 摘　　要

This letter demonstrates a complementary 2-D field-effect transistor (FET) technology with molybdenum disulfide (MoS2) as the active film, hexagonal boron nitride (hBN) as the gate dielectric, and graphene as the gate electrode. The active region of the n-channel (n-FET) and p-channel (p-FET) devices are formed by undoped and Nb-doped MoS2, respectively. The complementary FETs have the desirable threshold voltage polarity, similar current drive, and high on-off current ratios of more than 10(6). A complementary metal-oxide-semiconductor (CMOS) inverter has been fabricated and the measured gain is about 14 with 90% noise margin at a 2 V power supply.