• 文献标题:   Narrow depression in the density of states at the Dirac point in disordered graphene
  • 文献类型:   Article
  • 作  者:   SCHWEITZER L
  • 作者关键词:   electronic density of state, graphene, indentation, landau level, quantum hall effect, shortrange order
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Phys Tech Bundesanstalt
  • 被引频次:   12
  • DOI:   10.1103/PhysRevB.80.245430
  • 出版年:   2009

▎ 摘  要

The electronic properties of noninteracting particles moving on a two-dimensional bricklayer lattice are investigated numerically. In particular, the influence of disorder in form of a spatially varying random magnetic flux is studied. In addition, a strong perpendicular constant magnetic field B is considered. The density of states rho(E) goes to zero for E -> 0 as in the ordered system but with a much steeper slope. This happens for both cases: at the Dirac point for B=0 and at the center of the central Landau band for finite B. Close to the Dirac point, the dependence of rho(E) on the system size, on the disorder strength, and on the constant magnetic flux density is analyzed and fitted to an analytical expression proposed previously in connection with the thermal quantum-Hall effect. Additional short-range on-site disorder completely replenishes the indentation in the density of states at the Dirac point.