▎ 摘　　要

Crystalline GaN films can be grown even on amorphous substrates with the use of graphene buffer layers by pulsed sputtering deposition ( PSD). The graphene buffer layers allowed us to grow highly c-axis-oriented GaN films at low substrate temperatures. Full-color GaN-based LEDs can be fabricated on the GaN/graphene structures and they are operated successfully. This indicates that the present technique is promising for future large-area light-emitting displays on amorphous substrates.