• 文献标题:   Current enhancement due to field-induced dark carrier multiplication in graphene
  • 文献类型:   Article
  • 作  者:   JAGO R, WENDLER F, MALIC E
  • 作者关键词:   graphene, electric field, carrier dynamic, semiconductor bloch equation, carrier multiplication, auger scattering
  • 出版物名称:   2D MATERIALS
  • ISSN:   2053-1583
  • 通讯作者地址:   Tech Univ Berlin
  • 被引频次:   2
  • DOI:   10.1088/2053-1583/aa7408
  • 出版年:   2017

▎ 摘  要

We present a microscopic study on current generation in graphene in response to an electric field. While scattering is generally considered to reduce the current, we reveal that in graphene Auger processes give rise to a current enhancement via a phenomenon we denote dark carrier multiplication. Based on a microscopic approach, we show that, if other scattering channels are absent, this prevents the carrier distribution to reach a stationary value. Taking into account scattering with phonons a finite current is restored, however its value exceeds the stationary current without scattering.